| PART |
Description |
Maker |
| 2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT5G133 |
IGBT for strobe flash
|
TOSHIBA
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4301APP RJP4301APP-00-T2 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP5001APP-00-T2 RJP5001APP |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4301APP-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
